70 nm Damascene-Gate MOSFETs with Minimal Polysilicon Gate-Depletion

Author

Hanafi, Hussein I. ; Arndt, Russell ; Boyd, Diane ; Natzle, Wesley ; Ticknor, Adam

Author_Institution

IBM Research Division, Yorktown Heights, USA

fYear

2001

fDate

11-13 September 2001

Firstpage

143

Lastpage

146

Keywords

Annealing; Boron; CMOS process; Capacitance measurement; Chemicals; Electrodes; Fabrication; MOS devices; MOSFETs; Microelectronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2001. Proceeding of the 31st European

Print_ISBN

2-914601-01-8

Type

DOI

10.1109/ESSDERC.2001.195221

Filename

1506603

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