• DocumentCode
    1970472
  • Title

    The Effect of Impact Ionization on the Subthreshold Leakage Current in N-Channel Double-Gate SOI Transistors

  • Author

    Park, Jae-Kwan ; Deshpande, H.V. ; Woo, J.C.S.

  • Author_Institution
    University of California, Los Angeles, USA
  • fYear
    2001
  • fDate
    11-13 September 2001
  • Firstpage
    163
  • Lastpage
    166
  • Keywords
    Charge carrier processes; Current measurement; Electric variables; Electric variables measurement; Impact ionization; Leakage current; Length measurement; MOSFETs; Subthreshold current; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2001. Proceeding of the 31st European
  • Print_ISBN
    2-914601-01-8
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2001.195226
  • Filename
    1506608
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1970472