DocumentCode
1970537
Title
Gate and Source/Drain Engineering for 50 nm P-Channel MOSFET
Author
Guegan, G. ; Deleonibus, S. ; Bertrand, G. ; Souil, D. ; Rivallin, P. ; Tedesco, S. ; Mur, P. ; Holliger, P. ; Nier, M.E.
Author_Institution
CEA/LETI, Grenoble, France
fYear
2001
fDate
11-13 September 2001
Firstpage
171
Lastpage
174
Keywords
Boron; Cost function; Electronic mail; Ion implantation; Job shop scheduling; Lithography; MOSFET circuits; Manufacturing; Microelectronics; Production;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN
2-914601-01-8
Type
conf
DOI
10.1109/ESSDERC.2001.195228
Filename
1506610
Link To Document