Advanced Source/Drain Architecture using Very Low Schottky Barriers: Device Design and Material Engineering

Author

Dubois, Emmanuel ; Larrieu, Guilhem

Author_Institution

IEMN/ISEN, Villeneuve d´´Ascq, France

fYear

2001

fDate

11-13 September 2001

Firstpage

203

Lastpage

206

Keywords

Conductivity; Contact resistance; Design engineering; Doping; Fluctuations; MOSFET circuits; Schottky barriers; Silicides; Silicon; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2001. Proceeding of the 31st European

Print_ISBN

2-914601-01-8

Type

DOI

10.1109/ESSDERC.2001.195236

Filename

1506618

Link To Document