Title :
Advanced Source/Drain Architecture using Very Low Schottky Barriers: Device Design and Material Engineering
Author :
Dubois, Emmanuel ; Larrieu, Guilhem
Author_Institution :
IEMN/ISEN, Villeneuve d´´Ascq, France
fDate :
11-13 September 2001
Keywords :
Conductivity; Contact resistance; Design engineering; Doping; Fluctuations; MOSFET circuits; Schottky barriers; Silicides; Silicon; Transconductance;
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
DOI :
10.1109/ESSDERC.2001.195236
