DocumentCode
1970806
Title
High Quality Ultrathin La2O3 Films for High-k Gate Insulator
Author
Ohmi, Shun-ichiro ; Kobayashi, Chihiro ; Aizawa, Koji ; Yamamoto, Shuu´ichirou ; Tokumitsu, Eisuke ; Ishiwara, Hiroshi ; Iwai, Hiroshi
Author_Institution
Tokyo Institute of Technology, Yokohama, Japan
fYear
2001
fDate
11-13 September 2001
Firstpage
235
Lastpage
238
Keywords
Annealing; Capacitors; Dielectric substrates; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Insulation; Leakage current; Sputtering; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN
2-914601-01-8
Type
conf
DOI
10.1109/ESSDERC.2001.195244
Filename
1506626
Link To Document