• DocumentCode
    1970851
  • Title

    Tunnel Oxide Optimization for Device Scaling down: Nitridation Impact on Stress Induced Leakage Current

  • Author

    Ghidini, G. ; Sebastiani, A. ; Brazzelli, D. ; Zonca, R.

  • Author_Institution
    STMicroelectronics, Agrate Brianza, Italy
  • fYear
    2001
  • fDate
    11-13 September 2001
  • Firstpage
    247
  • Lastpage
    250
  • Keywords
    Charge measurement; Current measurement; Dielectrics; Leakage current; Stress measurement; Temperature; Thickness measurement; Time measurement; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2001. Proceeding of the 31st European
  • Print_ISBN
    2-914601-01-8
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2001.195247
  • Filename
    1506629
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1970851