DocumentCode :
1970851
Title :
Tunnel Oxide Optimization for Device Scaling down: Nitridation Impact on Stress Induced Leakage Current
Author :
Ghidini, G. ; Sebastiani, A. ; Brazzelli, D. ; Zonca, R.
Author_Institution :
STMicroelectronics, Agrate Brianza, Italy
fYear :
2001
fDate :
11-13 September 2001
Firstpage :
247
Lastpage :
250
Keywords :
Charge measurement; Current measurement; Dielectrics; Leakage current; Stress measurement; Temperature; Thickness measurement; Time measurement; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
Type :
conf
DOI :
10.1109/ESSDERC.2001.195247
Filename :
1506629
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1970851
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