• DocumentCode
    1970897
  • Title

    KA-Band Solid State Power Combining Amplifier

  • Author

    Bayuk, Franklin J. ; Raue, Jörg E.

  • Author_Institution
    TRW Defense and Space Systems Group, One Space Park, Redondo Beach, California, 90278, USA
  • fYear
    1977
  • fDate
    5-8 Sept. 1977
  • Firstpage
    482
  • Lastpage
    486
  • Abstract
    Solid state combining amplifier power levels in the multiwatt range have been achieved at frequencies in excess of 35 GHz. Both GaAs lo-hi-lo profile diodes, and Si double drift diodes are utilized in an amplifier which has an output power in excess of 5 watts at 37 GHz. The total amplifier gain is 33 dB and the 1 dB bandwidth exceeds 700 MHz. The amplifier features 5 stages, 3 of which operate in the negative resistance mode with 2 GHz of bandwidth, while the final two stages operate in the injection locked mode. These final stages represent the power stages and utilize TM010 resonant cavity combining structures. Computer aided design has been used extensively for circuit modeling and performance optimization. This solid state amplifier is small in size and lightweight, and is a first step towards replacement of the traveling wave tube amplifier for space applications.
  • Keywords
    Bandwidth; Diodes; Frequency; Gain; Gallium arsenide; Laser mode locking; Power amplifiers; Power generation; Resonance; Solid state circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1977. 7th European
  • Conference_Location
    Copenhagen, Denmark
  • Type

    conf

  • DOI
    10.1109/EUMA.1977.332471
  • Filename
    4131120