Deep groove etching for partial reflectors in InP-based monolithically integrated photonic devices

Author

Wang, Yin ; Wang, Lei ; Jin, Jialiang ; He, JianGÇÉJun

Author_Institution

State Key Lab. of Modern Opt. Instrum., Zhejiang Univ., Hangzhou, China

fYear

2010

fDate

8-12 Dec. 2010

Firstpage

730

Lastpage

731

Abstract

Dry etching process of InP is developed using inductively coupled plasma (ICP) with halogen and hydrocarbon based gas mixture. This recipe is optimized for deep groove etching requiring a high anisotropy and smooth surface morphology in integrated photonic device fabrication. A laser with good performance is fabricated using the etched groove as a partial reflector.

Keywords

III-V semiconductors; gas mixtures; indium compounds; integrated optics; optical communication equipment; optical elements; optical fabrication; plasma materials processing; sputter etching; surface morphology; InP; InP-based monolithically integrated photonic devices; anisotropy; deep groove etching; dry etching process; etched groove; halogen based gas mixture; hydrocarbon based gas mixture; inductively coupled plasma; integrated photonic device fabrication; laser; partial reflectors; smooth surface morphology; Cavity resonators; Etching; Gas lasers; Iterative closest point algorithm; Optical device fabrication; Radio frequency; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications and Photonics Conference and Exhibition (ACP), 2010 Asia

Conference_Location

Shanghai

Print_ISBN

978-1-4244-7111-9

Type

conf

DOI

10.1109/ACP.2010.5682711

Filename

5682711