The Genesis Process/sup TM/: a new SOI wafer fabrication method

The Genesis Process includes a new cost-effective method to fabricate high-quality SOI wafers. The process comprises steps of implanting a donor wafer with hydrogen ions using plasma immersion ion implantation (PIII). The implantation generates an embrittled hydrogen-rich layer within the donor wafer. This donor wafer is then bonded to a handle substrate using a special plasma-activated bonding process. Unlike conventional high-temperature thermally-activated hydrogen splitting processes, the wafers are separated along and guided by the hydrogen embrittled layer through a room-temperature controlled cleave process (rT-CCP). This cleaving process transfers a single-crystal silicon layer from the donor wafer to the handle wafer. The rT-CCP process improves layer transfer quality over the conventional high-temperature thermal layer transfer method.