Title :
High On Current in Quasi Double Gate Transistors with Undoped Channel Region
Author :
Landgraf, E. ; Rösner, W. ; Luyken, R.J.
Author_Institution :
Infineon Technologies AG, Munich, Germany
fDate :
11-13 September 2001
Keywords :
Current supplies; Electric variables measurement; Fabrication; FinFETs; MOSFETs; Neodymium; Scattering; Silicon on insulator technology; Thin film transistors; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
DOI :
10.1109/ESSDERC.2001.195253
