DocumentCode
1971132
Title
Cryogenic Characteristics of Millimetre Wavelength Sschottky Barrier Diodes
Author
Vizard, D.R.
Author_Institution
S.R.C., Appleton Laboratory, Ditton Park, Slough SL3 9JX, U.K.
fYear
1977
fDate
5-8 Sept. 1977
Firstpage
556
Lastpage
560
Abstract
High quality millimetre wavelength GaAs Schottky barrier diodes of various doping levels were measured over the temperature range 12°-300°K. The temperature dependence of various diode parameters agreed with existing theory. Factors relevant to obtaining optimum low noise performance from a cryogenic mixer utilizing these diodes are discussed. Finally, microwave measurements of mixer performance at 110 GHz are presented, and compared with the theoretical expectations of low temperature operation.
Keywords
Acoustical engineering; Cryogenics; Doping; Gallium arsenide; Schottky barriers; Schottky diodes; Temperature dependence; Temperature distribution; Temperature measurement; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1977. 7th European
Conference_Location
Copenhagen, Denmark
Type
conf
DOI
10.1109/EUMA.1977.332484
Filename
4131133
Link To Document