• DocumentCode
    1971132
  • Title

    Cryogenic Characteristics of Millimetre Wavelength Sschottky Barrier Diodes

  • Author

    Vizard, D.R.

  • Author_Institution
    S.R.C., Appleton Laboratory, Ditton Park, Slough SL3 9JX, U.K.
  • fYear
    1977
  • fDate
    5-8 Sept. 1977
  • Firstpage
    556
  • Lastpage
    560
  • Abstract
    High quality millimetre wavelength GaAs Schottky barrier diodes of various doping levels were measured over the temperature range 12°-300°K. The temperature dependence of various diode parameters agreed with existing theory. Factors relevant to obtaining optimum low noise performance from a cryogenic mixer utilizing these diodes are discussed. Finally, microwave measurements of mixer performance at 110 GHz are presented, and compared with the theoretical expectations of low temperature operation.
  • Keywords
    Acoustical engineering; Cryogenics; Doping; Gallium arsenide; Schottky barriers; Schottky diodes; Temperature dependence; Temperature distribution; Temperature measurement; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1977. 7th European
  • Conference_Location
    Copenhagen, Denmark
  • Type

    conf

  • DOI
    10.1109/EUMA.1977.332484
  • Filename
    4131133