DocumentCode :
1971133
Title :
Study of Degradation in Channel Initiated Secondary Electron Injection Regime
Author :
Mohapatra, Nihar R. ; Mahapatra, S. ; Rao, V. Ramgopal
Author_Institution :
Indian Institute of Technology, Bombay, India
fYear :
2001
fDate :
11-13 September 2001
Firstpage :
291
Lastpage :
294
Keywords :
Channel hot electron injection; Charge measurement; Charge pumps; Current measurement; Degradation; Hot carriers; MOSFETs; Nonvolatile memory; Stress measurement; Substrate hot electron injection;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
Type :
conf
DOI :
10.1109/ESSDERC.2001.195258
Filename :
1506640
Link To Document :
بازگشت