DocumentCode
1971170
Title
Design of RF CMOS low noise amplifiers using a current based MOSFET model
Author
Baroncini, Virginia Helena Varotto ; Gouveia-Filho, Oscar Da Costa
Author_Institution
Centro Fer. de Educacao Technol. do Parana, Brazil
fYear
2004
fDate
7-11 Sept. 2004
Firstpage
82
Lastpage
87
Abstract
This paper presents a design methodology for RF CMOS low noise amplifiers (LNA). This methodology uses a current-based MOSFET model, which allows a detailed analysis of an LNA for all MOSFET´s inversion regions. Design equations, including the induced gate noise in MOS devices are also presented and a design example with simulation results is shown.
Keywords
CMOS integrated circuits; MOSFET; integrated circuit design; integrated circuit noise; radiofrequency amplifiers; radiofrequency integrated circuits; semiconductor device models; semiconductor device noise; LNA; MOS devices; MOSFET inversion regions; RF CMOS low noise amplifier design; current based MOSFET model; induced gate noise; CMOS technology; Design methodology; Energy consumption; Integrated circuit noise; Low-noise amplifiers; MOSFET circuits; Radio frequency; Radiofrequency amplifiers; Semiconductor device modeling; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Circuits and Systems Design, 2004. SBCCI 2004. 17th Symposium on
Print_ISBN
1-58113-947-0
Type
conf
DOI
10.1109/SBCCI.2004.241022
Filename
1360549
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