DocumentCode
1971226
Title
Characterization, modeling and optimization of high power module packaging
Author
Trivedi, Malay ; Shenai, Krishna
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA
fYear
1997
fDate
27-29 Oct. 1997
Firstpage
103
Lastpage
106
Abstract
This paper reports the use of two-dimensional numerical simulations in modeling the effects of packaging on the electrical performance of high-power modules. Non-isothermal simulations are performed to study the performance and failure of IGBTs under short-circuit and clamped inductive switching stress.
Keywords
failure analysis; insulated gate bipolar transistors; modelling; modules; optimisation; packaging; power electronics; semiconductor device reliability; 2D numerical simulations; IGBTs; characterization; clamped inductive switching stress; electrical performance; high power module packaging; modeling; nonisothermal simulations; optimization; short-circuit stress; Circuit simulation; Current density; Insulated gate bipolar transistors; Multichip modules; Numerical simulation; Packaging; Power electronics; Semiconductor devices; Switching circuits; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Performance of Electronic Packaging, 1997., IEEE 6th Topical Meeting on
Conference_Location
Austin, TX
Print_ISBN
0-7803-8649-3
Type
conf
DOI
10.1109/EPEP.1997.634049
Filename
634049
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