• DocumentCode
    1971288
  • Title

    Experimental Evidence of Impact Ionisation in InP HBT´s Designed for Rapid Digital Applications: Implementation in a DC Model

  • Author

    Maneux, Cristell ; Martin, J.-C. ; Labat, N. ; Touboul, A. ; Riet, M. ; Benchimol, J.-L.

  • Author_Institution
    Universite Bordeaux 1, Talence, France
  • fYear
    2001
  • fDate
    11-13 Sept. 2001
  • Firstpage
    323
  • Lastpage
    326
  • Keywords
    Breakdown voltage; Contacts; Electric variables; Heterojunction bipolar transistors; Impact ionization; Indium gallium arsenide; Indium phosphide; Optical signal processing; Space charge; Time division multiplexing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2001. Proceeding of the 31st European
  • Conference_Location
    Nuremberg, Germany
  • Print_ISBN
    2-914601-01-8
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2001.195266
  • Filename
    1506648
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1971288