• DocumentCode
    1971307
  • Title

    Temperature Characterization of NDR in AlGaN/GaN HFETs

  • Author

    Maher, H. ; Bolognesi, C.R. ; Piner, E.L.

  • Author_Institution
    Simon Fraser University, Burnaby, Canada
  • fYear
    2001
  • fDate
    11-13 September 2001
  • Firstpage
    327
  • Lastpage
    330
  • Keywords
    Aluminum gallium nitride; Displays; Electron mobility; Epitaxial layers; Gallium nitride; HEMTs; MODFETs; Substrates; Temperature dependence; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2001. Proceeding of the 31st European
  • Print_ISBN
    2-914601-01-8
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2001.195267
  • Filename
    1506649
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1971307