Title :
Dynamic Two-Dimensional Computer Simulation of Three-Terminal Semiconductor Devices
Author :
Yu, S.P. ; Tantraporn, W.
Author_Institution :
General Electric Corporate Research and Development Schenectady, New York 12301, USA
Abstract :
Special schemes for treating device geometry permit the use of the very fast Hockney technique for solving the two dimensional Poisson equation so that dynamics of three-terminal semiconductor devices can be computer simulated economically. Successful simulations of bipolar devices and F.E.T.s are reported here.
Keywords :
Circuit simulation; Computational modeling; Computer simulation; FETs; Geometry; Nonlinear equations; Physics; Poisson equations; Semiconductor devices; Solid modeling;
Conference_Titel :
Microwave Conference, 1977. 7th European
Conference_Location :
Copenhagen, Denmark
DOI :
10.1109/EUMA.1977.332369
