• DocumentCode
    1971317
  • Title

    Dynamic Two-Dimensional Computer Simulation of Three-Terminal Semiconductor Devices

  • Author

    Yu, S.P. ; Tantraporn, W.

  • Author_Institution
    General Electric Corporate Research and Development Schenectady, New York 12301, USA
  • fYear
    1977
  • fDate
    5-8 Sept. 1977
  • Firstpage
    617
  • Lastpage
    628
  • Abstract
    Special schemes for treating device geometry permit the use of the very fast Hockney technique for solving the two dimensional Poisson equation so that dynamics of three-terminal semiconductor devices can be computer simulated economically. Successful simulations of bipolar devices and F.E.T.s are reported here.
  • Keywords
    Circuit simulation; Computational modeling; Computer simulation; FETs; Geometry; Nonlinear equations; Physics; Poisson equations; Semiconductor devices; Solid modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1977. 7th European
  • Conference_Location
    Copenhagen, Denmark
  • Type

    conf

  • DOI
    10.1109/EUMA.1977.332369
  • Filename
    4131142
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1971317