Title :
High Power Static Induction Transistor for Microwave Operation
Author :
Kajiwara, Y. ; Yukimoto, Y. ; Shirahata, K.
Author_Institution :
Semiconductor Research and Development Department, Kita-Itami Works, Mitsubishi Electric Corporation, Itami, JAPAN
Abstract :
A new type of transistor called "Static Induction Transistor (SIT)", by operation of majority carrier injection, has been successfully verified as a promising device for microwave high power operation. By using a novel structure and a process technique, the following remarkable results were obtained; (1) fmax of above 5 GHz, (2) amplifying power of 24 watts at 1 GHz, and (3) oscillating power of 100 watts at 200 MHz. The SIT showed a good linearity for power amplification and thermal stability for multi-chips operation.
Keywords :
Capacitance; Conductivity; Linearity; Microwave communication; Microwave devices; Microwave frequencies; Microwave transistors; Solid state circuits; Thermal stability; Voltage;
Conference_Titel :
Microwave Conference, 1977. 7th European
Conference_Location :
Copenhagen, Denmark
DOI :
10.1109/EUMA.1977.332370
