Title :
Comparison of TiO2-doped SiO2 films from two organosilicon precursors
Author :
Bange, Jaspal P. ; Patil, Lalit S. ; Gautam, D.K.
Author_Institution :
Dept. of Electron. Eng., Gunma Univ., Kiryu, Japan
Abstract :
In present work the effect of two different source of silicon Tetraethylorthosilicate and Octamethylcyclotetrasiloxane on TiO2-doped SiO2 films have been studied. The study reveals that film properties depend on the precursors used for deposition. The optical, chemical and surface properties have been characterized using ellipsometer and SEM with EDAX.
Keywords :
X-ray chemical analysis; ellipsometry; liquid phase deposition; scanning electron microscopy; silicon compounds; surface morphology; thin films; titanium compounds; EDAX; SEM; SiO2:TiO2; chemical properties; ellipsometry; flame hydrolysis deposition; octamethylcyclotetra-siloxane; optical properties; organosilicon precursors; surface morphology; surface properties; tetraethylorthosilicate; thin film properties; Ellipsometry; Fires; Optical films; Optical waveguides; Silicon; X-ray scattering; Octamethylcyclotetrasiloxane; Tetraetylorthosilicate; TiO2-doped SiO2;
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2010 Asia
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-7111-9
DOI :
10.1109/ACP.2010.5682745
