Title :
Investigations and Physical Modelling of Saturation Effects in Lateral DMOS Transistor Architectures Based on the Concept of Intrinsic Drain Voltage
Author :
Anghel, C. ; Hefyene, N. ; Ionescu, A.M. ; Vermandel, M. ; Bakeroot, B. ; Doutreloigne, J. ; Gillon, R. ; Frere, S. ; Maier, C. ; Mourier, Y.
Author_Institution :
EPFL, Lausanne, Switzerland
fDate :
11-13 September 2001
Keywords :
Analytical models; Automotive engineering; MOS devices; MOSFET circuits; Microelectronics; Numerical simulation; Physics; Radio frequency; Semiconductor device modeling; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
DOI :
10.1109/ESSDERC.2001.195285
