Title :
X-Band receiver front-end in fully depleted SOI technology
Author :
Orlando, P. ; Groves, K. ; Mattamana, A. ; Quach, T. ; Watson, P. ; Johnson, L. ; Wyatt, P. ; Chen, C.L. ; Chen, C.K. ; Drangmeister, R. ; Keast, C.
Author_Institution :
Air Force Res. Lab., Wright-Patterson AFB, OH, USA
Abstract :
This paper describes a wide band/high dynamic range receiver implemented in a 0.18-μm fully-depleted silicon-on-insulator (FDSOI) CMOS technology. The system demonstration is a single conversion architecture with RF input at X-Band and IF output at S-Band. The receiver yielded 20-21.5 dB conversion gain, 5.6-6 dB noise figure, and 16.7 dBm OIP3 across a 600-MHz instantaneous bandwidth at S-Band operation.
Keywords :
CMOS integrated circuits; silicon-on-insulator; S-band operation; X-band receiver front-end; bandwidth 600 MHz; fully depleted SOI technology; fully-depleted silicon-on-insulator CMOS technology; gain 20 dB to 21.5 dB; high dynamic range receiver; noise figure 5.6 dB to 6 dB; single conversion architecture; size 0.18 mum; wide band range receiver; CMOS integrated circuits; Gain; Impedance matching; Mixers; Noise figure; Radio frequency; Receivers; Balun; CMOS; FDSOI; Filter; Low Noise Amplifier; Mixer; RF receiver; Single Down Conversion;
Conference_Titel :
Ultra-Wideband (ICUWB), 2012 IEEE International Conference on
Conference_Location :
Syracuse, NY
Print_ISBN :
978-1-4577-2031-4
DOI :
10.1109/ICUWB.2012.6340507
