Title :
Elimination of stress induced silicon defects in very high density SRAM structures
Author :
Ferreira, P. ; Bianchi, R.-A. ; Guyader, F. ; Pantel, R. ; Granger, E.
Author_Institution :
STMicroelectronics, Crolles, France
fDate :
11-13 September 2001
Keywords :
Fabrication; Leakage current; Microelectronics; Oxidation; Random access memory; Rapid thermal processing; Research and development; Silicon; Testing; Thermal stresses;
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
DOI :
10.1109/ESSDERC.2001.195292
