Title :
Influence of Ge-profile Design and Saturation Effects on SiGe HBT Linearity
Author :
Malm, B. Gunnar ; Östling, Mikael
Author_Institution :
Royal Institute of Technology, Kista, Sweden
fDate :
11-13 September 2001
Keywords :
Computational modeling; Doping profiles; Finite element methods; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Silicon germanium; Solids; Spectral analysis;
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
DOI :
10.1109/ESSDERC.2001.195298
