Title :
Strain contrast of dilute semiconductor GaN1-xAsx and Si1-yCy hetero-epitaxial films in annular dark field images
Author :
Wu, X. ; Baribeau, J.M. ; Gupta, J.A.
Author_Institution :
Inst. for Microstruct. Sci., Nat. Res. Council Canada, Ottawa, ON, Canada
Abstract :
The lower average atomic number strained GaNxAs1-x (x = 0.029 and 0.045) and Si1-yCy (y les 0.015) films were found to be brighter than the higher average atomic number GaAs and Si in annular dark field (ADF) images.
Keywords :
III-V semiconductors; epitaxial layers; gallium arsenide; gallium compounds; silicon compounds; wide band gap semiconductors; GaAs; GaNAs; SiC; annular dark field images; average atomic number; dilute semiconductor; hetero-epitaxial films; strain contrast; Atomic layer deposition; Atomic measurements; Capacitive sensors; Detectors; Gallium arsenide; Gallium nitride; Molecular beam epitaxial growth; Semiconductor films; Silicon carbide; Substrates; ADF-STEM; Dilute semiconductor strained film;
Conference_Titel :
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-3829-7
Electronic_ISBN :
978-1-4244-3830-3
DOI :
10.1109/CLEOPR.2009.5292215
