• DocumentCode
    1971871
  • Title

    Design and fabrication of 980nm three-active regions high power semiconductor lasers

  • Author

    Wang, Zhiqun ; Zhang, Lei ; Cui, Bifeng ; Shen, Guangdi

  • Author_Institution
    Beijing Optoelectron. Technol. Lab., Beijing Univ. of Technol., Beijing, China
  • fYear
    2009
  • fDate
    30-3 Aug. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Based on the principle of tunnel regeneration, three-active regions high power semiconductor lasers were designed and fabricated. Powered by pulse currents limited at 30 A, the emitting wavelength of 998 nm, the optical power output of 40.48 W, Ith of 7.95 A and the differential efficiency of 1.62 W/A were obtained.
  • Keywords
    aluminium compounds; gallium arsenide; optical fabrication; semiconductor lasers; AlGaAs-GaAs; emitting wavelength; optical power output; power 40.48 W; pulse currents; three-active region high power semiconductor lasers; tunnel regeneration; wavelength 998 nm; Biomedical optical imaging; Doping; Gallium arsenide; Laser theory; Optical design; Optical device fabrication; Optical pumping; Power lasers; Quantum cascade lasers; Semiconductor lasers; AlGaAs/GaAs; high power; semiconductor laser;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-3829-7
  • Electronic_ISBN
    978-1-4244-3830-3
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2009.5292217
  • Filename
    5292217
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1971871