DocumentCode :
1971900
Title :
Investigation of pMOSFET Hot Electron Induced Punch Through (HEIP) in Shallow Trench Isolation
Author :
Lee, Jae-kyu ; Lee, Sang-Hyeon ; Jeong, G.T. ; Chung, T.Y. ; Kim, Kinam
Author_Institution :
Samsung Electronic Co., Yongin City, Korea
fYear :
2001
fDate :
11-13 September 2001
Firstpage :
467
Lastpage :
470
Keywords :
Electrons; MOSFET circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
Type :
conf
DOI :
10.1109/ESSDERC.2001.195302
Filename :
1506684
Link To Document :
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