Title :
Relevance of Gate Current for the Functionality of Deep Submicron CMOS Circuits
Author :
Schwantes, Stefan ; Krautschneider, Wolfgang
Author_Institution :
Technical University Hamburg-Harburg, Germany
fDate :
11-13 September 2001
Keywords :
Analytical models; Circuit simulation; Electrodes; Equations; Fluctuations; MOSFETs; Region 4; TV; Transconductance; Tunneling;
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
DOI :
10.1109/ESSDERC.2001.195303
