Title :
New insight on the frequency dependence of TDDB in high-k/metal gate stacks
Author :
Bezza, Assma ; Rafik, M. ; Roy, Didier ; Federspiel, Xavier ; Mora, P. ; Ghibaudo, Gerard
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
This paper deals with the oxide breakdown (BD) under positive gate voltage in nMOS Devices. First, bulk current is shown to be more sensitive than gate current for breakdown event detection. Then, since test interruption is shown to induce possible error in TBD evaluation, a methodology with an on the fly detection of breakdown is proposed for both DC and AC stresses. Finally, a discussion on the impact of charge trapping/detrapping is opened.
Keywords :
MOSFET; high-k dielectric thin films; semiconductor device breakdown; semiconductor device reliability; AC stress; DC stress; bulk current; charge detrapping; charge trapping; gate current; high-k-metal gate stacks; nMOS Devices; oxide breakdown; positive gate voltage; time dependent dielectric breakdown; Charge carrier processes; Electric breakdown; Interrupters; Logic gates; MOSFET; Metals; Stress; High-k; Reliability; TDDB; breakdown; dielectric; metal gate; trapping;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
978-1-4799-0350-4
DOI :
10.1109/IIRW.2013.6804142
