New insight on the frequency dependence of TDDB in high-k/metal gate stacks

Author

Bezza, Assma ; Rafik, M. ; Roy, Didier ; Federspiel, Xavier ; Mora, P. ; Ghibaudo, Gerard

Author_Institution

STMicroelectron., Crolles, France

fYear

2013

fDate

13-17 Oct. 2013

Firstpage

11

Lastpage

14

Abstract

This paper deals with the oxide breakdown (BD) under positive gate voltage in nMOS Devices. First, bulk current is shown to be more sensitive than gate current for breakdown event detection. Then, since test interruption is shown to induce possible error in TBD evaluation, a methodology with an on the fly detection of breakdown is proposed for both DC and AC stresses. Finally, a discussion on the impact of charge trapping/detrapping is opened.

Keywords

MOSFET; high-k dielectric thin films; semiconductor device breakdown; semiconductor device reliability; AC stress; DC stress; bulk current; charge detrapping; charge trapping; gate current; high-k-metal gate stacks; nMOS Devices; oxide breakdown; positive gate voltage; time dependent dielectric breakdown; Charge carrier processes; Electric breakdown; Interrupters; Logic gates; MOSFET; Metals; Stress; High-k; Reliability; TDDB; breakdown; dielectric; metal gate; trapping;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International

Conference_Location

South Lake Tahoe, CA

ISSN

1930-8841

Print_ISBN

978-1-4799-0350-4

Type

conf

DOI

10.1109/IIRW.2013.6804142

Filename

6804142