Assessing the reliability and performance impact on the three-dimensional structure of multigate field effect transistor (MugFET)

Multigate Field Effect Transistors (MugFETs) have begun to enter the marketplace, and therefore, have garnered significant attention. This is due the outstanding attributes of these three-dimensional device structures, which include excellent immunity to short channel effects, and CMOS compatible processing. However, there are some unique aspects to this type of device structure that should be investigated to ensure their viability to extend to future nodes. The goal of this presentation is to show electrical characterization and reliability evaluation approaches that provide an overview of MugFET device aspects and how they impact reliability and performance. The focus will be on silicon-on-insulator, double-gate MugFETs — also known as a type of FinFETs.