Fast-capacitance for advanced device characterization

Fast-CV measurements are frequently being used to study transient phenomena associated with advanced devices. In this study, we show that many artifacts plague this measurement and then provide a proper method to legitimize fast-CV measurements as trustworthy. We show a remarkably accurate correspondence between a complete fast CV measurement, from accumulation to inversion, and a conventional CV measurement on the same device. The results distinguish fast-CV as a powerful tool for device characterization and reliability measurements.