• DocumentCode
    1972156
  • Title

    Modeling of MOVPE GaAs Growth Assuming Thermodynamic Equilibrium at The Growth Front: (C2H5)2GaCl and AsH3

  • Author

    Hierlemann, M. ; Kuech, T.F.

  • Author_Institution
    University of Wisconsin, Department of Chemical Engineering
  • fYear
    1992
  • fDate
    8-11 Jun 1992
  • Firstpage
    112
  • Lastpage
    113
  • Keywords
    Boundary conditions; Chemistry; Epitaxial growth; Epitaxial layers; Gallium arsenide; Impurities; Inductors; Semiconductor process modeling; Temperature dependence; Thermodynamics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
  • Print_ISBN
    0-87942-652-7
  • Type

    conf

  • DOI
    10.1109/MOVPE.1992.664967
  • Filename
    664967
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1972156