DocumentCode
1972211
Title
Laser-based bandgap engineering of quantum semiconductor wafers
Author
Dubowski, Jan J.
Author_Institution
Dept. of Quantum Semicond., Univ. de Sherbrooke, Sherbrooke, QC, Canada
fYear
2009
fDate
30-3 Aug. 2009
Firstpage
1
Lastpage
2
Abstract
Both laser-RTA (rapid thermal annealing) and UV excimer laser technologies have been investigated for post-growth bandgap engineering of quantum well and quantum dot wafers. The results indicate that this approach has the potential to offer industrially attractive solutions.
Keywords
excimer lasers; rapid thermal annealing; semiconductor quantum dots; semiconductor quantum wells; UV excimer laser; laser-RTA; laser-based bandgap engineering; quantum dot wafers; quantum semiconductor wafers; quantum well; rapid thermal annealing; Laser tuning; Microstructure; Optical materials; Photonic band gap; Quantum dot lasers; Quantum dots; Quantum well lasers; Semiconductor device manufacture; Semiconductor lasers; Surface emitting lasers; Nd:YAG; excimer laser; iterative bandgap tuning; laser annealing; quantum well intermixing;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-3829-7
Electronic_ISBN
978-1-4244-3830-3
Type
conf
DOI
10.1109/CLEOPR.2009.5292232
Filename
5292232
Link To Document