Title :
1.55µm photoluminescent iron silicide prepared by thermal diffusion of Iron nanoparticles into Si Substrate
Author :
Pai, Yi-Hao ; Cheng, Kuang-Nan ; Lin, Gong-Ru
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The iron silicide thin-films prepared by thermal diffusion of Iron nanoparticles into Si Substrate at 900°C in pure N2 environment is demonstrated to show strong room-temperature photoluminescence (PL) at 1.55 μm. The increase of iron nanoparticle concentration from 7.4 wt% to 19 wt% further effectively enhances the room-temperature PL intensity.
Keywords :
iron compounds; liquid phase deposition; photoluminescence; thermal diffusion; thin films; FeSi2; Si; iron nanoparticles; iron silicide thin-films; photoluminescent iron silicide; temperature 293 K to 298 K; temperature 900 degC; thermal diffusion; wavelength 1.55 mum; Annealing; Iron; Nanoparticles; Photoluminescence; Silicides; Silicon; Substrates; Iron silicide; iron nanoparticle; photoluminescence; thermal diffusion;
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2010 Asia
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-7111-9
DOI :
10.1109/ACP.2010.5682783
