Light extraction behavior of GaN-based light-emitting diodes with different substrate conditions; nano-size and micro-sized sapphire substrates??

Author

Kim, Sang-Mook ; Oh, Hwa Sub ; Lee, Kwang Cheol ; Baek, Jong Hyeob

Author_Institution

Korea Photonics Technol. Inst. (KOPTI), Gwangju, South Korea

fYear

2010

fDate

8-12 Dec. 2010

Firstpage

160

Lastpage

161

Abstract

We fabricated In_xGa_1-xN multiple quantum well (MQW) light-emitting diodes (LEDs) on patterned sapphire substrates (PSSs); the nano-sized PSS (NPSS) and the micro-sized PSS (MPSS), and investigated to enhance the light extraction efficiency (LEE) of LEDs. Furthermore, the micro-Raman and ER spectroscopy were used to compare the strain and piezoelectric fields in the In_xGa_1-xN MQWs grown on the different substrate conditions. The light output power (at 20 mA) of the MPSS and NPSS are 11.4 mW and 11.6 mW, which are enhanced by 39% and 41% compared with that of the conventional LED, respectively.

Keywords

III-V semiconductors; Raman spectra; gallium compounds; indium compounds; light emitting diodes; piezoelectricity; sapphire; semiconductor quantum wells; wide band gap semiconductors; Al₂O₃; ER spectroscopy; InGaN; current 20 mA; light emitting diodes; light extraction efficiency; microRaman spectroscopy; microsized substrates; multiple quantum well; nanosize substrates; piezoelectric fields; power 11.4 mW; power 11.6 mW; strain; Gallium nitride; Light emitting diodes; Optical device fabrication; Optical scattering; Power generation; Quantum well devices; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications and Photonics Conference and Exhibition (ACP), 2010 Asia

Conference_Location

Shanghai

Print_ISBN

978-1-4244-7111-9

Type

conf

DOI

10.1109/ACP.2010.5682784

Filename

5682784