• DocumentCode
    1972272
  • Title

    Self-assembled InAs/GaAs quantum dot molecules with InxGa1−xAs strain-reducing layer

  • Author

    Yu, Y. ; Huang, L.R. ; Tian, P. ; Huang, D.X.

  • Author_Institution
    Wuhan Nat. Lab. for Optoelectron., Huazhong Univ. of Sci. & Technol., Wuhan, China
  • fYear
    2010
  • fDate
    8-12 Dec. 2010
  • Firstpage
    162
  • Lastpage
    163
  • Abstract
    Self-assembled lateral InAs quantum dot molecules (QDMs) with InxGa1-xAs strain-reducing layer are grown by metal-organic chemical vapor deposition. A redshift of emission wavelength and wideband photoluminescence spectra of QDMs are observed, which make QDM a potential candidate for broadband optical devices.
  • Keywords
    III-V semiconductors; MOCVD; gallium arsenide; indium compounds; photoluminescence; red shift; self-assembly; semiconductor growth; semiconductor quantum dots; InxGa1-xAs; InAs-GaAs; broadband optical devices; emission wavelength; metal-organic chemical vapor deposition; redshift; self-assembled quantum dot molecules; strain-reducing layer; wideband photoluminescence spectra; Gallium arsenide; Indium gallium arsenide; Optical devices; Quantum dots; Self-assembly; Temperature; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Photonics Conference and Exhibition (ACP), 2010 Asia
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-7111-9
  • Type

    conf

  • DOI
    10.1109/ACP.2010.5682785
  • Filename
    5682785
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1972272