DocumentCode :
1972309
Title :
Influence of the condition parameters on UV pulsed laser polishing of sapphire wafer
Author :
Wei, Xin ; Guo, Xiaoyan ; Xie, Xiaozhu
Author_Institution :
Fac. of Electromech. Eng., Guangdong Univ. of Technol., Guangzhou, China
fYear :
2009
fDate :
30-3 Aug. 2009
Firstpage :
1
Lastpage :
4
Abstract :
In this paper, the study on polishing characteristics of sapphire using a short pulse (25 ps) ultraviolet laser (355 nm) was conducted. The polished surfaces were observed and their surface roughness Ra was measured to analyze the correlations of surface roughness with pulse conditions, such as the influences of laser fluence, incidence angle, scanning speed and scanning manner. The research results show that the surface roughness Ra of polished sapphire wafer was improved obviously as the fluence increases, with the increase of laser incidence angle or scanning times, the surface roughness of sapphire decreases. And the surface roughness increases with the increase of laser scanning speed.
Keywords :
optical pulse shaping; polishing; sapphire; surface roughness; Al2O3; UV pulsed laser polishing; laser fluence; laser incidence angle; sapphire wafer; scanning manner; scanning speed; short pulse ultraviolet laser; surface roughness; Chemical lasers; Fiber lasers; Optical materials; Optical pulses; Optical surface waves; Rough surfaces; Scanning electron microscopy; Surface emitting lasers; Surface morphology; Surface roughness; UV pulsed laser; laser polishing; sapphire wafer;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-3829-7
Electronic_ISBN :
978-1-4244-3830-3
Type :
conf
DOI :
10.1109/CLEOPR.2009.5292236
Filename :
5292236
Link To Document :
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