• DocumentCode
    1972309
  • Title

    Influence of the condition parameters on UV pulsed laser polishing of sapphire wafer

  • Author

    Wei, Xin ; Guo, Xiaoyan ; Xie, Xiaozhu

  • Author_Institution
    Fac. of Electromech. Eng., Guangdong Univ. of Technol., Guangzhou, China
  • fYear
    2009
  • fDate
    30-3 Aug. 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, the study on polishing characteristics of sapphire using a short pulse (25 ps) ultraviolet laser (355 nm) was conducted. The polished surfaces were observed and their surface roughness Ra was measured to analyze the correlations of surface roughness with pulse conditions, such as the influences of laser fluence, incidence angle, scanning speed and scanning manner. The research results show that the surface roughness Ra of polished sapphire wafer was improved obviously as the fluence increases, with the increase of laser incidence angle or scanning times, the surface roughness of sapphire decreases. And the surface roughness increases with the increase of laser scanning speed.
  • Keywords
    optical pulse shaping; polishing; sapphire; surface roughness; Al2O3; UV pulsed laser polishing; laser fluence; laser incidence angle; sapphire wafer; scanning manner; scanning speed; short pulse ultraviolet laser; surface roughness; Chemical lasers; Fiber lasers; Optical materials; Optical pulses; Optical surface waves; Rough surfaces; Scanning electron microscopy; Surface emitting lasers; Surface morphology; Surface roughness; UV pulsed laser; laser polishing; sapphire wafer;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-3829-7
  • Electronic_ISBN
    978-1-4244-3830-3
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2009.5292236
  • Filename
    5292236