• DocumentCode
    1972348
  • Title

    High Mobility and Low Interface Recombination Velocity GaAs/AlxGa1-xAs Heterointerfaces Grown by MOVPE

  • Author

    Kuech, T.F. ; Wolford, D.J. ; Gilliland, G.D. ; Bradley, J.A.

  • Author_Institution
    IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY
  • fYear
    1992
  • fDate
    8-11 Jun 1992
  • Firstpage
    114
  • Lastpage
    114
  • Keywords
    Chemical engineering; Epitaxial growth; Epitaxial layers; Gallium arsenide; Inorganic materials; Optical buffering; Optical materials; Organic materials; Spontaneous emission; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
  • Print_ISBN
    0-87942-652-7
  • Type

    conf

  • DOI
    10.1109/MOVPE.1992.664968
  • Filename
    664968