DocumentCode
1972348
Title
High Mobility and Low Interface Recombination Velocity GaAs/AlxGa1-xAs Heterointerfaces Grown by MOVPE
Author
Kuech, T.F. ; Wolford, D.J. ; Gilliland, G.D. ; Bradley, J.A.
Author_Institution
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY
fYear
1992
fDate
8-11 Jun 1992
Firstpage
114
Lastpage
114
Keywords
Chemical engineering; Epitaxial growth; Epitaxial layers; Gallium arsenide; Inorganic materials; Optical buffering; Optical materials; Organic materials; Spontaneous emission; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN
0-87942-652-7
Type
conf
DOI
10.1109/MOVPE.1992.664968
Filename
664968
Link To Document