• DocumentCode
    1972400
  • Title

    Dependence of the filament resistance on the duration of current overshoot

  • Author

    Shrestha, P. ; Nminibapiel, D. ; Campbell, J.P. ; Cheung, K.P. ; Baumgart, Helmut ; Deora, S. ; Bersuker, Gennadi

  • Author_Institution
    Semicond. & Dimensional Metrol. Div., NIST, Gaithersburg, MD, USA
  • fYear
    2013
  • fDate
    13-17 Oct. 2013
  • Firstpage
    55
  • Lastpage
    58
  • Abstract
    The characteristics of a conductive filament in HfO2 RRAM is shown to be dependent on the duration of the current compliance overshoot, which may occur during the filament formation process. In addition to the overshoot amplitude, the filament resistance is found to be affected by the duration of the overshoot caused by the parasitic capacitance.
  • Keywords
    electric resistance; hafnium compounds; random-access storage; HfO2; RRAM; conductive filament; current overshoot; filament resistance; nonvolatile resistance change memory; overshoot amplitude; parasitic capacitance; Capacitors; Current measurement; Hafnium compounds; Parasitic capacitance; Resistance; Switches; RESET current; RRAM; current overshoot;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International
  • Conference_Location
    South Lake Tahoe, CA
  • ISSN
    1930-8841
  • Print_ISBN
    978-1-4799-0350-4
  • Type

    conf

  • DOI
    10.1109/IIRW.2013.6804158
  • Filename
    6804158
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1972400