Zero/low field SDR and SDT used for atomic scale probes of NBTI and TDDB

Author

Cochrane, Corey J. ; Lenahan, Patrick M.

Author_Institution

Eng. Sci., Pennsylvania State Univ., University Park, PA, USA

fYear

2013

fDate

13-17 Oct. 2013

Firstpage

88

Lastpage

89

Abstract

This work focuses on the use of a zero- and low-field detection technique of spin dependent recombination and spin dependent tunneling used for studying the bias temperature instabilities in MOSFETs and time dependent dielectric breakdown in this film dielectrics.

Keywords

MOSFET; elemental semiconductors; negative bias temperature instability; resonant tunnelling; semiconductor device breakdown; semiconductor device reliability; silicon; silicon compounds; MOSFETs; NBTI; Si-SiO₂; TDDB; film dielectrics; negative bias temperature instability; spin dependent recombination; spin dependent tunneling; time dependent dielectric breakdown; zero-low field detection technique; Dielectrics; MOSFET; Magnetic field measurement; Magnetic fields; Magnetic resonance; Radiative recombination; Silicon; bias temperature instability; electrically detected magnetic resonance; spin dependent recombination; spin dependent tunneling; time dependent dielectric breakdown;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International

Conference_Location

South Lake Tahoe, CA

ISSN

1930-8841

Print_ISBN

978-1-4799-0350-4

Type

conf

DOI

10.1109/IIRW.2013.6804165

Filename

6804165