DocumentCode :
1972634
Title :
Characterization of Electrical and Optical Loss MOCVD Regrown in Interfaces Layer lnGaAs-GaAs Quantum Well Heterostructure Lasers
Author :
Coekerill, T.M. ; Honig, J. ; Alwan, J.J. ; Forbes, D.V. ; Coleman, J.J.
Author_Institution :
University of Illinois
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
115
Lastpage :
116
Keywords :
Absorption; Epitaxial layers; MOCVD; Optical losses; Photonic crystals; Potential well; Quantum well lasers; Radiative recombination; Surface emitting lasers; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664969
Filename :
664969
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1972634
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