Compact GaInP/GaAs HBT Gilbert Mixers With On-Chip Active LO Balun

Author

Wu, Tzung-Han ; Lin, Yi-Chen ; Meng, Chinchun ; Wu, Tse-Hung ; Wei, Hung-Ju ; Huang, Guo-Wei

Author_Institution

Dept. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu

fYear

2007

fDate

11-14 Dec. 2007

Firstpage

1

Lastpage

4

Abstract

A Gilbert micromixer is demonstrated in this paper using GalnP/GaAs HBT technology. The RF, LO, and IF ports of the micromixer are all single-ended using the on-chip active LO balun. The port-to-port isolation has its best performance when the LO signal is balanced. The stand-along micromixer is suitable for hybrid RF system applications. The fully matched high linearity micromixer has the conversion gain of 12 dB, IP_IdB of-9 dBm, IIP₃ of 1 dBm when input IF=300 MHz, LO=3.5 GHz and output RF=3.8 GHz.

Keywords

III-V semiconductors; baluns; gallium arsenide; indium compounds; microwave isolators; microwave mixers; Gilbert micromixer; Gilbert mixers; HBT technology; on-chip active LO balun; port-to-port isolation; stand-along micromixer; Bandwidth; Circuits; Dynamic range; Gain; Gallium arsenide; Heterojunction bipolar transistors; Impedance matching; RF signals; Radio frequency; Transconductors; GaInP/GaAs HBT; Micromixer; On-chip active balun; Port-to-port isolation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2007. APMC 2007. Asia-Pacific

Conference_Location

Bangkok

Print_ISBN

978-1-4244-0748-4

Electronic_ISBN

978-1-4244-0749-1

Type

conf

DOI

10.1109/APMC.2007.4554631

Filename

4554631