DocumentCode
1972859
Title
Very Smooth AIGaAs-GaAs Quantum Wells Grown by Metalorganic Chemical Vapor Deposition
Author
Dupuis, Russell D. ; Neff, James G. ; Pinzone, Christopher J.
Author_Institution
Department of Electrical and Computer Engineering, The University of Texas at Austin
fYear
1992
fDate
8-11 Jun 1992
Firstpage
117
Lastpage
118
Keywords
Chemical vapor deposition; Epitaxial growth; Gallium arsenide; MOCVD; Microelectronics; Molecular beam epitaxial growth; Quantum well devices; Quantum well lasers; Substrates; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN
0-87942-652-7
Type
conf
DOI
10.1109/MOVPE.1992.664970
Filename
664970
Link To Document