Title :
On the nature of “permanent” degradation in NBTI
Author :
Nguyen, Duc Dung ; Kouhestani, C. ; Kambour, K.E. ; Devine, R.A.B.
Author_Institution :
COSMIAC, Albuquerque, NM, USA
Abstract :
This paper reports new high temperature measurements of Negative Bias Temperature Instability induced interface states in both NMOS and PMOS devices. Evidence of annealing of the interface states, previously thought to be “permanent”, is presented for measurements including a methodology which allows the direct measurement of the time dependent growth/recovery of the interface state component.
Keywords :
MOSFET; interface states; negative bias temperature instability; semiconductor device breakdown; semiconductor device reliability; temperature measurement; NMOS device; PMOS device; high temperature measurements; interface state recovery; negative bias temperature instability; permanent degradation; reliability; time dependent interface growth; MOS devices; Stress; Stress measurement; Temperature measurement; Threshold voltage; Time measurement; Voltage measurement; NBTI defects; reliability;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
978-1-4799-0350-4
DOI :
10.1109/IIRW.2013.6804181
