Title :
Metal Organic Vapor Phase Epitaxy of GaAs on Si Using IIa-Floride Buffer Layers
Author :
Tiwari, A.N. ; Freundlich, A. ; Beaumont, B. ; Blunier, S. ; Zogg, H. ; Teodoropol, S. ; Verie, C.
Author_Institution :
Physics Institute, University of Zurich, Switzerland
Keywords :
Backscatter; Buffer layers; Crystallization; Electrons; Epitaxial growth; Gallium arsenide; Strain measurement; X-ray diffraction;
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
DOI :
10.1109/MOVPE.1992.664971
