DocumentCode
1973085
Title
Metal Organic Vapor Phase Epitaxy of GaAs on Si Using IIa-Floride Buffer Layers
Author
Tiwari, A.N. ; Freundlich, A. ; Beaumont, B. ; Blunier, S. ; Zogg, H. ; Teodoropol, S. ; Verie, C.
Author_Institution
Physics Institute, University of Zurich, Switzerland
fYear
1992
fDate
8-11 Jun 1992
Firstpage
119
Lastpage
120
Keywords
Backscatter; Buffer layers; Crystallization; Electrons; Epitaxial growth; Gallium arsenide; Strain measurement; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN
0-87942-652-7
Type
conf
DOI
10.1109/MOVPE.1992.664971
Filename
664971
Link To Document