DocumentCode
1973135
Title
Reliability comparison of pure ZrO2 and Al− doped ZrO2 MIM capacitors
Author
Seidel, K. ; Weinreich, W. ; Polakowski, P. ; Triyoso, D.H. ; Nolan, M.G. ; Yiang, K.Y. ; Chu, S.
Author_Institution
Fraunhofer Center Nanoelectronic Technol., Dresden, Germany
fYear
2013
fDate
13-17 Oct. 2013
Firstpage
185
Lastpage
186
Abstract
In this paper, the authors have shown that the Al-doping concentration of ZrO2 based dielectrics in BEOL has a big influence on electrical properties and reliability. Despite steep field acceleration behavior undoped ZrO2 suffers from early failures and uncontrolled leakage mechanisms. High Al-concentrations also show higher leakage current and less reliability. It is recommended to apply only small Al-doping concentrations in order to benefit from good field acceleration and capacitance density as well as low leakage current.
Keywords
MIM devices; aluminium; capacitance; doping profiles; high-k dielectric thin films; leakage currents; reliability; thin film capacitors; zirconium compounds; BEOL applications; MIM capacitors; ZrO2; ZrO2:Al; capacitance density; doping concentrations; electrical properties; high-k dielectric material; leakage current; reliability; Capacitance; Capacitors; Leakage currents; MIM capacitors; Materials; Semiconductor device reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International
Conference_Location
South Lake Tahoe, CA
ISSN
1930-8841
Print_ISBN
978-1-4799-0350-4
Type
conf
DOI
10.1109/IIRW.2013.6804190
Filename
6804190
Link To Document