• DocumentCode
    1973135
  • Title

    Reliability comparison of pure ZrO2 and Al doped ZrO2 MIM capacitors

  • Author

    Seidel, K. ; Weinreich, W. ; Polakowski, P. ; Triyoso, D.H. ; Nolan, M.G. ; Yiang, K.Y. ; Chu, S.

  • Author_Institution
    Fraunhofer Center Nanoelectronic Technol., Dresden, Germany
  • fYear
    2013
  • fDate
    13-17 Oct. 2013
  • Firstpage
    185
  • Lastpage
    186
  • Abstract
    In this paper, the authors have shown that the Al-doping concentration of ZrO2 based dielectrics in BEOL has a big influence on electrical properties and reliability. Despite steep field acceleration behavior undoped ZrO2 suffers from early failures and uncontrolled leakage mechanisms. High Al-concentrations also show higher leakage current and less reliability. It is recommended to apply only small Al-doping concentrations in order to benefit from good field acceleration and capacitance density as well as low leakage current.
  • Keywords
    MIM devices; aluminium; capacitance; doping profiles; high-k dielectric thin films; leakage currents; reliability; thin film capacitors; zirconium compounds; BEOL applications; MIM capacitors; ZrO2; ZrO2:Al; capacitance density; doping concentrations; electrical properties; high-k dielectric material; leakage current; reliability; Capacitance; Capacitors; Leakage currents; MIM capacitors; Materials; Semiconductor device reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International
  • Conference_Location
    South Lake Tahoe, CA
  • ISSN
    1930-8841
  • Print_ISBN
    978-1-4799-0350-4
  • Type

    conf

  • DOI
    10.1109/IIRW.2013.6804190
  • Filename
    6804190