Title :
Reliability comparison of pure ZrO2 and Al− doped ZrO2 MIM capacitors
Author :
Seidel, K. ; Weinreich, W. ; Polakowski, P. ; Triyoso, D.H. ; Nolan, M.G. ; Yiang, K.Y. ; Chu, S.
Author_Institution :
Fraunhofer Center Nanoelectronic Technol., Dresden, Germany
Abstract :
In this paper, the authors have shown that the Al-doping concentration of ZrO2 based dielectrics in BEOL has a big influence on electrical properties and reliability. Despite steep field acceleration behavior undoped ZrO2 suffers from early failures and uncontrolled leakage mechanisms. High Al-concentrations also show higher leakage current and less reliability. It is recommended to apply only small Al-doping concentrations in order to benefit from good field acceleration and capacitance density as well as low leakage current.
Keywords :
MIM devices; aluminium; capacitance; doping profiles; high-k dielectric thin films; leakage currents; reliability; thin film capacitors; zirconium compounds; BEOL applications; MIM capacitors; ZrO2; ZrO2:Al; capacitance density; doping concentrations; electrical properties; high-k dielectric material; leakage current; reliability; Capacitance; Capacitors; Leakage currents; MIM capacitors; Materials; Semiconductor device reliability;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International
Conference_Location :
South Lake Tahoe, CA
Print_ISBN :
978-1-4799-0350-4
DOI :
10.1109/IIRW.2013.6804190
