DocumentCode
1973152
Title
Computer Modelling of GaAs F.E.T.s
Author
Brewitt-Taylor, C.R. ; Robson, P.N. ; Sitch, J.E.
Author_Institution
Department of Electronic and Electrical Engineering, The University of Sheffield, Mappin Street, Sheffield S1 3JD, England.
fYear
1978
fDate
4-8 Sept. 1978
Firstpage
415
Lastpage
419
Abstract
A fast two dimensional computer simulation to model the transient and steady state performance of GaAs FETs has been written. Results from the simulation are used to describe some important features of operation including typical electric field and mobile charge distributions and the variation of the noise influence functions. An expression for the expected noise figure is obtained in terms of these noise influence functions and is compared with experimentally observed trends.
Keywords
Computational modeling; Computer simulation; FETs; Finite element methods; Gallium arsenide; Neodymium; Noise figure; Poisson equations; Steady-state; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1978. 8th European
Conference_Location
Paris, France
Type
conf
DOI
10.1109/EUMA.1978.332539
Filename
4131237
Link To Document