• DocumentCode
    197326
  • Title

    Rapid melt grown germanium p-i-n photodiode wrapped around a silicon waveguide

  • Author

    Going, Ryan ; Tae Joon Seok ; Wu, Ming C.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, Berkeley, CA, USA
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report on a compact germanium photodiode design where single crystal germanium wraps around a single mode silicon waveguide. A 32 μm long, 626 aF, p-i-n device has 0.8 A/W responsivity at 1550 nm.
  • Keywords
    elemental semiconductors; germanium; optical fabrication; optical waveguides; p-i-n photodiodes; silicon; Ge-Si; capacitance 626 aF; compact germanium p-i-n photodiode; p-i-n device; rapid melt growth; responsivity; single crystal germanium; single mode silicon waveguide; size 32 mum; wavelength 1550 nm; Germanium; Optical device fabrication; Optical interconnections; Optical waveguides; PIN photodiodes; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2014 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6990000
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=197326