• DocumentCode
    1973285
  • Title

    Influence of the thickness variation of the SiOx layer on the Si quantum dots based MOSLED

  • Author

    Bo-Han Lai ; Cheng, Chih-Hsien ; Gong-Ru Lin

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2010
  • fDate
    8-12 Dec. 2010
  • Firstpage
    56
  • Lastpage
    57
  • Abstract
    The SiOx thickness affects the Si -QDs based MOSLED. The EL wavelength redshifts from 430 nm to 510 nm when the SiOx thickness increasing from 125 nm to 385 nm. The Si-QDs based MOSLED with the SiOx thickness of 385 nm has the maximum EL power of 469 nW.
  • Keywords
    electroluminescence; light emitting diodes; red shift; semiconductor quantum dots; silicon; silicon compounds; MOSLED; Si; SiO; power 469 nW; quantum dots; size 125 nm to 385 nm; thickness variation; wavelength 430 nm to 510 nm; Density measurement; Electric variables measurement; Films; Light emitting diodes; Plasma measurements; Size measurement; Thickness measurement; Si Quantum Dots; Si based MOSLED; Thickness of the SiOx;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Photonics Conference and Exhibition (ACP), 2010 Asia
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-7111-9
  • Type

    conf

  • DOI
    10.1109/ACP.2010.5682837
  • Filename
    5682837
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1973285