Title :
The monolithic heterogeneous integration of GaAs PIN photodiode and Si CMOS-based transimpedance amplifier
Author :
Kume, E. ; Ishii, Hiroyuki ; Itatani, T. ; Yamanaka, S. ; Takada, Tatsuo ; Hata, Masaharu ; Osada, Takenori ; Inoue, Takeru ; Matsumoto, Yuki
Author_Institution :
Nano-Electron. Inst. Res., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
Abstract :
This article describes a GaAs PIN photodiode was directly grown on a Si substrate in which CMOS-based transimpedance amplifier (TIA) was fabricated using general Si CMOS process. This monolithic integration device was successfully demonstrated.
Keywords :
CMOS integrated circuits; III-V semiconductors; elemental semiconductors; gallium arsenide; integrated optoelectronics; operational amplifiers; p-i-n photodiodes; silicon; GaAs PIN photodiode; GaAs-Si; Si CMOS-based transimpedance amplifier; TIA; monolithic heterogeneous integration; monolithic integration device; CMOS integrated circuits; Epitaxial growth; Gallium arsenide; Light emitting diodes; PIN photodiodes; Silicon; Substrates;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
