DocumentCode
1973304
Title
Design and Performance of a 2 to 18 GHz Medium Power Ga As Mesfet Amplifier
Author
Basawapatna, Ganesh R.
Author_Institution
Hewlett-Packard Co., Santa Rosa Division, Santa Rosa, CA 95404, U.S.A.
fYear
1978
fDate
4-8 Sept. 1978
Firstpage
458
Lastpage
462
Abstract
This paper discusses the design and performance of a multi-stage wideband GaAs MESFET amplifier. The amplifier had a small signal gain of 12 to 20 dB in the frequency range of 2 to 18 GHz. The l-dB gain-compression point of the amplifier was 13 dBm and the saturated power output exceeded 16 dBm. The wideband matching techniques used and the trade-offs involved are discussed. Also discussed are the device parameters and their relationships to the performance of the amplifier.
Keywords
Bandwidth; Broadband amplifiers; Capacitors; Frequency; Gallium arsenide; Impedance; Inductors; MESFETs; Power amplifiers; Resistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1978. 8th European
Conference_Location
Paris, France
Type
conf
DOI
10.1109/EUMA.1978.332547
Filename
4131245
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