Title :
Design and Performance of a 2 to 18 GHz Medium Power Ga As Mesfet Amplifier
Author :
Basawapatna, Ganesh R.
Author_Institution :
Hewlett-Packard Co., Santa Rosa Division, Santa Rosa, CA 95404, U.S.A.
Abstract :
This paper discusses the design and performance of a multi-stage wideband GaAs MESFET amplifier. The amplifier had a small signal gain of 12 to 20 dB in the frequency range of 2 to 18 GHz. The l-dB gain-compression point of the amplifier was 13 dBm and the saturated power output exceeded 16 dBm. The wideband matching techniques used and the trade-offs involved are discussed. Also discussed are the device parameters and their relationships to the performance of the amplifier.
Keywords :
Bandwidth; Broadband amplifiers; Capacitors; Frequency; Gallium arsenide; Impedance; Inductors; MESFETs; Power amplifiers; Resistors;
Conference_Titel :
Microwave Conference, 1978. 8th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.1978.332547
